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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC681 description collector-emitter sustaining voltage- : v ceo(sus) = 70v (min) low collector saturation voltage- : v ce(sat) = 2.0v(max.)@ i c = 5a applications designed for use in b/w tv hor izontal output applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 200 v v ceo collector-emitter voltage 70 v v ebo emitter-base voltage 5 v i c collector current-continuous 6 a i cm collector current-peak 20 a i b b base current-continuous 2 a p c collector power dissipation @t c =25 50 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC681 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 50ma; i b = 0 70 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 0.6a b 2.0 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 0.6a b 1.5 v i cbo collector cutoff current v cb = 200v; i e = 0 1.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 10 ma t f fall time i c = 5a; v cc = 25v 0.5 s isc website www.iscsemi.cn |
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